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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35 NPN 4 GHz wideband transistor
Product specification Supersedes data of 1995 Sep 12 1999 Aug 24
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter
page
BFG35
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM PARAMETER collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency up to Ts = 135 C (note 1) IC = 100 mA; VCE = 10 V; Tj = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C open base CONDITIONS MIN. - - - 25 - - - - TYP. - - - 70 4 15 11 750 MAX. 18 150 1 - - - - - GHz dB dB mV UNIT V mA W
maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C
Vo
output voltage
IC = 100 mA; VCE = 10 V; dim = -60 dB; RL = 75 ; f(p+q-r) = 793.25 MHz; Tamb = 25 C
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 135 C (note 1) open emitter open base open collector CONDITIONS MIN. - - - - - -65 - MAX. 25 18 2 150 1 +150 175 UNIT V V V mA W C C
1999 Aug 24
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 10 V IC = 100 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 1 MHz IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo d2 output voltage second order intermodulation distortion note 2 note 3 note 4 note 5 MIN. - 25 - - - - - - - - - - TYP. - 70 2 10 1.2 4 15 11 750 800 -55 -57 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 135 C (note 1) VALUE 40
BFG35
UNIT K/W
MAX. 1 - - - - - - - - - - -
UNIT A pF pF pF GHz dB dB mV mV dB dB
Notes
s 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------- dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. dim = -60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C Vp = Vo at dim = -60 dB; fp = 795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 3. dim = -60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C Vp = Vo at dim = -60 dB; fp = 445.25 MHz; Vq = Vo -6 dB; fq = 453.25 MHz; Vr = Vo -6 dB; fr = 455.25 MHz; measured at f(p+q-r) = 443.25 MHz. 4. IC = 60 mA; VCE = 10 V; RL = 75 ; Vp = Vq = Vo = 50 dBmV; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz. 5. IC = 60 mA; VCE = 10 V; RL = 75 ; Vp = Vq = VO = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1999 Aug 24
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
handbook, full pagewidth
VCC L6 VBB C3 R1 input 75 C1 L1 L2 DUT C7 C2 R3 R4
MBB284
C4 L5 L3 C6
C5
R2 L4
output 75
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit) DESIGNATION C1, C3, C5, C6 C2, C7 C4 (note 1) L1 L2 L3 (note 1) L4 L5 L6 (note 1) R1 R2 (note 1) R3, R4 Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness 116 inch; thickness of copper sheet 132 inch. DESCRIPTION multilayer ceramic capacitor multilayer ceramic capacitor miniature ceramic plate capacitor microstrip line microstrip line 1.5 turns 0.4 mm copper wire microstripline Ferroxcube choke 0.4 mm copper wire metal film resistor metal film resistor metal film resistor 75 5 H 25 nH 10 k 200 27 length 30 mm 2322 180 73103 2322 180 73201 2322 180 73279 VALUE 10 nF 1 pF 10 nF 75 75 length 7mm; width 2.5 mm length 22mm; width 2.5 mm int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm 3122 108 20153 DIMENSIONS CATALOGUE NO. 2222 590 08627 2222 851 12108 2222 629 08103
1999 Aug 24
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
handbook, full pagewidth
VBB C3 VCC C5
R1
R3 L3
L5
75 input
C1 L1 C2 R2 R4 L6 C4 L2
C6 L4 C7
75 output
MBB299
handbook, full pagewidth
80 mm
60 mm
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation test circuit printed circuit board.
1999 Aug 24
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB336
MBB361
handbook, halfpage P
1.2
tot (W)
handbook, halfpage
120
1.0
h FE
0.8
80
0.6
0.4
40
0.2
0 0 50 100 150 Ts 200 ( o C)
0 0 40 80 120 160 I C (mA)
VCE = 10 V; Tj = 25 C.
Fig.5 Fig.4 Power derating curve.
DC current gain as a function of collector current.
MBB381
handbook, halfpage
3
handbook, halfpage
8
MBB357
C re (pF)
fT (GHz) 6 2
4
1 2
0 0 4 8 12 16 20 VCE (V)
0 0 40 80 120 I C (mA) 160
IE = 0; f = 1 MHz; Tj = 25 C.
VCE = 10 V; f = 500 MHz; Tj = 25 C
Fig.6
Feedback capacitance as a function of collector-emitter voltage.
Fig.7
Transition frequency as a function of collector current.
1999 Aug 24
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB386
MBB385
handbook, halfpage
40
handbook, halfpage
45
G UM (dB) 30
d im (dB)
50
55 20 60 10 65
0 10
102
103
f (MHz)
104
70 20
40
60
80
100 120 I C (mA)
IC = 100 mA; VCE = 10 V; Tamb = 25 C.
VCE = 10 V; Vo = 800 mV; f(p+q-r) = 443.25 MHz; Tamb = 25 C.
Fig.8
Maximum unilateral power gain as a function of frequency.
Fig.9
Intermodulation distortion as a function of collector current.
MBB383
MBB382
handbook, halfpage
45
d im (dB)
handbook, halfpage
45
d2 (dB)
50
50
55
55
60
60
65
65
70 20
40
60
80
100 120 I C (mA)
70 20
40
60
80
100 120 I C (mA)
VCE = 10 V; Vo = 750 mV; f(p+q-r) = 793.25 MHz; Tamb = 25 C.
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb = 25 C.
Fig.10 Intermodulation distortion as a function of collector current.
Fig.11 Second order intermodulation distortion as a function of collector current.
1999 Aug 24
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB384
handbook, halfpage
45
d2 (dB)
50
55
60
65
70 20
40
60
80
100 120 I C (mA)
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 C.
Fig.12 Second order intermodulation distortion as a function of collector current.
1999 Aug 24
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
50
handbook, full pagewidth
25 0
100
10
250
+j 0 -j 10 25 50 100 250
10 3 GHz
250
25 50 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 .
100
MBB380
Fig.13 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
120 o
60 o
150 o
30 o
180 o
50
40
30
20
10
0o
150 o
30 o
120 o 90 o IC = 100 mA; VCE = 10 V; Tamb = 25 C.
60 o
MBB286
Fig.14 Common emitter forward transmission coefficient (S21).
1999 Aug 24
9
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
90 o
handbook, full pagewidth
120 o
60 o
150 o
30 o
180 o
0.1 0.2
0.3 0.4
0.5
0.6
0o
150 o
30 o
120 o 90 o IC = 100 mA; VCE = 10 V; Tamb = 25 C.
60 o
MBB285
Fig.15 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10 0 +j 0 -j 10 25 50 100 250
250
10 3 GHz
250
25 50 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 .
100
MBB379
Fig.16 Common emitter output reflection coefficient (S22).
1999 Aug 24
10
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
PACKAGE OUTLINE
BFG35
handbook, full pagewidth
0.95 0.85
S 0.32 0.24
seating plane 6.7 6.3 3.1 2.9
0.1 S
B 4
0.2 M A
A
0.10 0.01
3.7 3.3
o
7.3 6.7
16 o max
16
1 1.80 max 10 o max 2.3 4.6
2 0.80 0.60
3 0.1 M B (4x)
MSA035 - 1
Dimensions in mm.
Fig.17 SOT223.
1999 Aug 24
11
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BFG35
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 24
12
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
NOTES
BFG35
1999 Aug 24
13
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
NOTES
BFG35
1999 Aug 24
14
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
NOTES
BFG35
1999 Aug 24
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/03/pp16
Date of release: 1999
Aug 24
Document order number:
9397 750 06337

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